30N60A4D N-Channel IGBT DSEP15-06B 600V 15A Diode TO-220 Package Input Voltage 4V-38V DC Output

Input Voltage 4V-38V DC Output Voltage 1

These are Metal Film Resistor with a value of 39k ohm 1W and tolerance of ±5%

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Many new features have been included to lower system costs while also improving design flexibility

30N60A4D N-Channel IGBT DSEP15-06B 600V 15A Diode TO-220 Package Input Voltage 4V-38V DC Output30N60A4D is a MOS gated high voltage switching device that combines the finest qualities of MOSFETs and bipolar transistors. This component combines the low on state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25C and 150C, the significantly smaller on state voltage drop only varies somewhat. The IGBT used is of development type TA49343. The TA49373 development type diode is the one employed in anti